Micro and Nano Technologies and Systems

The group forms with the CeRMiN, the UCLouvain Research center for micro- and nano-scopic materials and electronics devices, a multidisciplinary team, involving both silicon device physicists, technologists and experimentalists, as well as circuit designers. It gathers about 50 members, out of which 5 professors and more than 36 PhD students and researchers.

Principal Investigators :

Denis Flandre, Laurent Francis, Isabelle Huynen, Dimitri Lederer, Sorin Melinte, Jean-Pierre Raskin

Research Labs : 

RF SOI Group, Biosensors Group

Research Areas :     

Nanoparticles for smart electronics

This activity covers the characterization up to 110 GHz, of bulk and nanocomposite materials in various states: solids, foams, liquids, powders, gels, films, … The models created using these measurements allow to extend the range of application of nanostructures, and to develop new sensors and signal processing devices. Of current interest are ferromagnetic nanowires for tunable electronics, carbonated nanoparticles (carbon nanotubes, graphene) for intelligent packaging (EMI shielding, ESD protection, photovoltaic), and nanoporous thin film membranes for fuel cell applications.

Molecular opto-electronics and plasmonics

Our current projects aim at understanding the fundamental nanoscience of man-made quantum structures, namely semiconductor nanodevices and hybrid inorganic-organic platforms for molecular opto-electronics and plasmonics. In particular, we use high-resolution nanolithography as well as soft-lithography and bottom-up fabrication techniques to engineer smart nano- and microsystems. Recently, our group started the development of cutting-edge instrumentation in the area of scanning tunneling spectroscopy and near-field experimental setups based on photon detection.

SOI CMOS technology

ICTEAM has been active in Silicon-on-Insulator (SOI) technology since 1986. Silicon-on-Insulator (SOI) has been a major theme of R&D for more than 20 years, leading to significant contributions with regards to e.g. double-gate MOSFETs, nanowires, high-temperature SOI CMOS, microwaves and millimeter-waves SOI MOSFETs and substrate, Ultra-Low-Power smart sensors (including biosensors) in terms of processing, characterization, simulation, modeling and design.

MEMS/NEMS

Bulk and surface micromachining sensors for chemical, medical and harsh environments applications. The group members are focused on varied devices design and fabrication of MEMS and NEMS structures co-integrated with SOI CMOS circuits: design and fabrication of NEMS-based lab-on-chip to characterize the electromechanical properties of materials at nanometer scale, nanowires gas sensors, nanoporous silicon membranes, magnetometers, flow, humidity, pressure and inertial sensors, surface acoustic wave device, etc.

Research infrastructure :

Winfab is equipped with a complete pilot fabrication line on silicon/SOI substrates of about 1,000 m² for the rapid prototyping and validation of new fabrication steps and of new integrated devices or microsystems.

Electrical measurement set-ups available in WELCOME cover a large range of frequencies (from DC up to 110 GHz) and temperatures (from few mK up to 400°C) on wafer-scale as well as packaged circuits levels. Physical (e.g. interface or thin layer properties) and mechanical (adhesion, stress...) characterization are widely available in the CeRMiN environment.

Simulation tools include industry-standard softwares for integrated processes and devices. Device irradiation is available at the nearby cyclotron research centre on a bench qualified by ESA. The wide research results have been honoured by more than 50 invited presentations in international and national conferences, as well as by several awards.

Most recent publications

Below are listed the 10 most recent journal articles and conference papers produced in this research area. You also can access all publications by following this link : see all publications.